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Antennas and Microwave Engineering MCQs: 170 Questions & Answers in Engineering

170 Antennas and Microwave Engineering MCQs in Engineering with answers & explanations. Page 5. Practice objective questions for competitive exams, interview… Use the answer toggle below to show or hide all solutions, tap an option to check one question, or open a question for its own page.

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Antennas and Microwave Engineering MCQs: 170 Questions & Answers in Engineering

Important factors to be considered for power amplifier design are:

are used in the final stages of radar and radio transmitters to increase the radiated power level.

Gain of power amplifiers with increase in operating frequency.

1 MICROWAVE PASSIVE COMPONENTS: DIRECTIONAL COUPLER, POWER DIVIDER, MAGIC TEE ATTENUATOR, RESONATOR

amplifiers are linear circuits, where the transistor is biased to conduct over the entire range of the input signal cycle.

A class B amplifier consists of transistors in order to conduct the input signal over the entire cycle.

Power amplifiers in the increasing order of efficiency is:

Behavior of a transistor in power amplifiers is unpredictable at all input signal levels.

If the output power of an amplifier is 10 V, and the input power supplied to the amplifier is 0.229 V given that the DC voltage used is

If a power amplifier has an output power of 10 W, and an amplifier gain of 16.4 dB, then the input drive power is:

GaAs is used in the fabrication of GUNN diodes because:

In a GaAs n-type specimen, the current generated is constant irrespective of the electric filed applied to the specimen.

When the electric field applied to GaAs specimen is less than the threshold electric field, the current in the material:

GaAs is used in fabricating Gunn diode. Gunn diode is:

The electrodes of a Gunn diode are made of:

When either a voltage or current is applied to the terminals of bulk solid state compound GaAs, a differential is developed in that bulk device.

The number of modes of operation for n type GaAs is:

The free electron concentration in N-type GaAs is controlled by:

The modes of operation of a Gunn diode are illustrated in a plot of voltage applied to the Gunn diode v/s frequency of operation of Gunn diode.

The mode of operation in which the Gunn diode is not stable is:

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